Part number:
GPT10N60
Manufacturer:
Greatpower
File Size:
1.17 MB
Description:
Power field effect transistor.
* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer
GPT10N60
Greatpower
1.17 MB
Power field effect transistor.
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APR. 30, 2012 Version 1.1
GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without.
