GPT10N60D Description
GPT10N60 / GPT10N60D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance.
GPT10N60D Features
* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer
GPT10N60D Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Reduced Gate Charge Ultra Low On-Res
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