EMBA5N10A
Excelliance MOS
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N-channel logic level enhancement mode field effect transistor.
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EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH
BVDSS
100V
RDSON (MAX.)@VGS=10V
135mΩ
RDSON (MAX.)@VGS=4.5.
EMBA5N10CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 10A G
UIS, Rg.
EMBA5N10G - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 4A
G
UIS, Rg.
EMBA5N10V - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 8A
G
UIS, Rg.
EMBA5A10G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
BVDSS RDSON (MAX.)
100V 150mΩ
ID 3A
.
EMBA5C10A - MOSFET
(Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS RDSON (MAX.) ID
N‐CH 100V 150mΩ 3A
P‐CH.
EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
100V
‐100V
RDSON (MAX.)
150mΩ 250mΩ
ID
3.
EMBA5P06J - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
-60V
RDSON (MAX.)
150mΩ
ID
-2.2A
G
S Pb-Free Lead Pl.
EMBA5P06P - MOSFET
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐60V
D
RDSON (MAX.)
150mΩ
ID
‐2.4A
G
S
.
EMBA0A10G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
100mΩ
ID 3.5A
.