EMBA5N10A Datasheet, transistor equivalent, Excelliance MOS

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Part number:

EMBA5N10A

Manufacturer:

Excelliance MOS

File Size:

227.15kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

Datasheet Preview: EMBA5N10A 📥 Download PDF (227.15kb)
Page 2 of EMBA5N10A Page 3 of EMBA5N10A

TAGS

EMBA5N10A
N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
Excelliance MOS

📁 Related Datasheet

EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 135mΩ RDSON (MAX.)@VGS=4.5.

EMBA5N10CS - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg.

EMBA5N10G - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  4A  G   UIS, Rg.

EMBA5N10V - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  8A  G   UIS, Rg.

EMBA5A10G - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:      N‐CH  BVDSS  RDSON (MAX.)  100V  150mΩ  ID  3A   .

EMBA5C10A - MOSFET (Excelliance MOS)
    N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:      BVDSS  RDSON (MAX.)  ID  N‐CH  100V  150mΩ  3A  P‐CH.

EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3.

EMBA5P06J - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -60V RDSON (MAX.) 150mΩ ID -2.2A G S Pb-Free Lead Pl.

EMBA5P06P - MOSFET (Excelliance MOS)
    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐60V  D RDSON (MAX.)  150mΩ  ID  ‐2.4A  G    S .

EMBA0A10G - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    BVDSS  100V  RDSON (MAX.)  100mΩ  ID  3.5A      .

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