EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH
BVDSS
100V
RDSON (MAX.)@VGS=10V
135mΩ
RDSON (MAX.)@VGS=4.5.
EMBA5N10CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID
10A
G
UIS, Rg 100% Tested.
EMBA5N10G - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 4A
G
UIS, Rg.
EMBA5N10V - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID
8A
G
UIS, Rg 100% Tested
.
EMBA5A10G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
BVDSS
100V
RDSON (MAX.)
150mΩ
ID
3A
Pb‐Free Lead Pl.
EMBA5C10A - MOSFET
(Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS RDSON (MAX.) ID
N‐CH 100V 150mΩ 3A
P‐CH ‐100V 250mΩ ‐2.5.
EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
100V
‐100V
RDSON (MAX.)
150mΩ 250mΩ
ID
3.
EMBA5P06J - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
-60V
RDSON (MAX.)
150mΩ
ID
-2.2A
G
S Pb-Free Lead Pl.