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EMBA5N10A Datasheet - Excelliance MOS

EMBA5N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TC = 25 °C  TC = 100 °C  Avalanche Current  Avalanche Energy  Repetitive Avalanche Energy2  L = 0.1mH, ID=12A, RG=2.

EMBA5N10A-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMBA5N10A

Manufacturer:

Excelliance MOS

File Size:

227.15 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMBA5N10A EMBA5N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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