EMBA5N10A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 10A G
UIS, Rg.
EMBA5N10CS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 10A G
UIS, Rg.
EMBA5N10G, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 4A
G
UIS, Rg.
EMBA5N10V, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 8A
G
UIS, Rg.
EMBA5P06J, Excelliance MOS
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
-60V
RDSON (MAX.)
150mΩ
ID
-2.2A
G
S Pb-Free Lead Pl.