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EMBA5C10G Datasheet - Excelliance MOS

EMBA5C10G N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3A ‐2.5A EMBA5C10G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM.

EMBA5C10G-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMBA5C10G

Manufacturer:

Excelliance MOS

File Size:

210.31 KB

Description:

N & p-channel logic level enhancement mode field effect transistor.

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EMBA5C10G EMBA5C10G P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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