EMBA5C10G Datasheet (Excelliance MOS) - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMBA5C10G, N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3A ‐2.5A EMBA5C10G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM