P-Channel Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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InterFET Product Folder Technical Support Order Now IFN201-A-2 IFN201, IFN201A, IFN202 N-Channel JFET Features • InterFET N106A Geometry • Tight

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a 2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs AD7811/AD7812 FEATURES 10-Bit ADC with 2.3 ␮s Conversion Time The AD7811 has Four Sin

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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a FEATURES Wideband Digital IF Parallel Output Wideband Digital IF Parallel Input Allows Cascade of Chips for Additional Channels Programmable IF and

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SVF840T/F/D/S_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840T/F/D/S is an N-channel enhancement mode power MOS field effect transist

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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NT50198 NT50198 TFT-LCD 3-Channel Charge Pump Power IC Draft Spec. Version 0.05 2012/08/22 2012/08/22 1 Version 0.05 With respect to the informat

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UNISONIC TECHNOLOGIES CO., LTD 7N50-MTQ Preliminary 7.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N50-MTQ is an N-channel mode power MO

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional d

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ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 DESCRIPTION This new generation of Trench MOSFETs from

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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Differential/Single-Ended Input, Dual 2 MSPS, 12-Bit, 3-Channel SAR ADC AD7266 FEATURES Dual 12-bit, 3-channel ADC Throughput rate: 2 MSPS Specified

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PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profi

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