A1SHB Key Features
- VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- Part: A1SHB
- Manufacturer: H&M Semiconductor (official site)
- Size: 803.79 KB
Other A1SHB Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
YANGJING |
A1SHB | P-Channel MOSFET |
Bruckewell Technology |
A1SHB | P-Channel Enhancement Mode Power MOSFET |
Vanguard Semiconductor |
A1SHB | P-Channel Advanced Power MOSFET |
Kexin Semiconductor |
A1SHB | P-Channel MOSFET |
A1SHB Description
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.