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A1SHB Datasheet P-channel Trench Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM2301B P-Channel Enhancement Mode Power MOSFET.

General Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

General

Key Features

  • VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment.

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