A1SHB Datasheet and Specifications PDF

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM ap.

* VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application
* PWM applications
* Load switch SOT-23 top view.

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM a.

* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram
* High power and current handing capability
* Lead free product is acquired
* Surface mount package Marking and pin assignment Application
* PWM applications
* Load switch SC70-3/ SOT-323 top.

SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1.

* VDS (V) =-20V
* RDS(ON) ＜ 100mΩ (VGS =-4.5V)
* RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1
* Absolute Ma.

VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant; Halogen free V DS R DS(on),TYP @VGS=-4.5V R DS(on.

* P-Channel
* Enhancement mode
* Fast Switching
* Pb-free lead plating; RoHS compliant; Halogen free V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-3.3V R DS(on),TYP @VGS=-2.5V ID -20 V 86 mΩ 94 mΩ 106 mΩ -3 A SOT23 Part ID V2301BC-A Package Type SOT23 Marking A1SHB Tape and reel in.