| Part Number | A1SHB Datasheet |
|---|---|
| Manufacturer | H&M Semiconductor |
| Overview |
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM ap.
* VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V * High power and current handing capability * Lead free product is acquired * Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application * PWM applications * Load switch SOT-23 top view. |
A1SHB Datasheet and Specifications PDF
The A1SHB is a P-Channel Trench Power MOSFET.
| Part Number | A1SHB Datasheet |
|---|---|
| Description | P-Channel Enhancement Mode Power MOSFET |
| Manufacturer | Bruckewell Technology |
| Overview |
The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM a.
* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram * High power and current handing capability * Lead free product is acquired * Surface mount package Marking and pin assignment Application * PWM applications * Load switch SC70-3/ SOT-323 top. |
| Part Number | A1SHB Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel Enhancement MOSFET SI2301 (KI2301)
MOSFET
■ Features
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V)
G1
S2
3D
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1.
* VDS (V) =-20V * RDS(ON) ＜ 100mΩ (VGS =-4.5V) * RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 * Absolute Ma. |
| Part Number | A1SHB Datasheet |
|---|---|
| Description | P-Channel Advanced Power MOSFET |
| Manufacturer | Vanguard Semiconductor |
| Overview |
VS2301BC-A
-20V/-3A P-Channel Advanced Power MOSFET
Features
P-Channel Enhancement mode Fast Switching Pb-free lead plating; RoHS compliant; Halogen free
V DS R DS(on),TYP @VGS=-4.5V R DS(on.
* P-Channel * Enhancement mode * Fast Switching * Pb-free lead plating; RoHS compliant; Halogen free V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-3.3V R DS(on),TYP @VGS=-2.5V ID -20 V 86 mΩ 94 mΩ 106 mΩ -3 A SOT23 Part ID V2301BC-A Package Type SOT23 Marking A1SHB Tape and reel in. |