Part A1SHB
Description P-Channel Trench Power MOSFET
Category MOSFET
Manufacturer H&M Semiconductor
Size 803.79 KB
H&M Semiconductor

A1SHB Overview

Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package D G S A1SHB Marking and pin assignment
A1SHB reference image

Representative A1SHB image (package may vary by manufacturer)