EMBA5N10CS
Excelliance MOS
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EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
NāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mĪ©
ID 10A G
UIS, Rg.
EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH
BVDSS
100V
RDSON (MAX.)@VGS=10V
135mĪ©
RDSON (MAX.)@VGS=4.5.
EMBA5N10G - MOSFET
(Excelliance MOS)
NāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mĪ©
ID 4A
G
UIS, Rg.
EMBA5N10V - MOSFET
(Excelliance MOS)
NāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mĪ©
ID 8A
G
UIS, Rg.
EMBA5A10G - MOSFET
(Excelliance MOS)
Dual NāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
NāCH
BVDSS RDSON (MAX.)
100V 150mĪ©
ID 3A
.
EMBA5C10A - MOSFET
(Excelliance MOS)
N & PāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS RDSON (MAX.) ID
NāCH 100V 150mĪ© 3A
PāCH.
EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N & PāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
NāCH
PāCH
BVDSS
100V
ā100V
RDSON (MAX.)
150mĪ© 250mĪ©
ID
3.
EMBA5P06J - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
-60V
RDSON (MAX.)
150mĪ©
ID
-2.2A
G
S Pb-Free Lead Pl.
EMBA5P06P - MOSFET
(Excelliance MOS)
PāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
ā60V
D
RDSON (MAX.)
150mĪ©
ID
ā2.4A
G
S
.
EMBA0A10G - MOSFET
(Excelliance MOS)
Dual NāChannel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
100mĪ©
ID 3.5A
.