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EMBA5N10AS Datasheet - Excelliance MOS

EMBA5N10AS N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 135mΩ RDSON (MAX.)@VGS=4.5V 170mΩ ID @TC=25℃ 10A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current L = 0.01mH Avalanche Energy L = 1.0mH Repe.

EMBA5N10AS-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMBA5N10AS

Manufacturer:

Excelliance MOS

File Size:

423.47 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMBA5N10AS EMBA5N10AS N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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