EMBA5C10A Datasheet (Excelliance MOS)

EMBA5C10A, MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 100V 150mΩ 3A P‐CH ‐100V 250mΩ ‐2.5A D1 G1 S1 D2 G2 S2 EMBA5C10A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature