BFR505
FEATURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability. DESCRIPTION
PINNING PIN 1 2 3 base emitter collector fpage
DESCRIPTION
Code: N30
MSB003
The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). The transistor is encapsulated in a plastic SOT23 envelope.
Top view
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE Cre f T GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 135 °C; note 1 IC = 5 m A; VCE = 6 V IC = ic = 0; VCB = 6 V; f = 1 MHz IC = 5 m A; VCE = 6 V; f = 1 GHz IC = 5 m A; VCE = 6 V;...
