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BFR520T Datasheet

NPN 9 GHz wideband transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T
NPN 9 GHz wideband transistor
Preliminary specification
1999 Oct 18


NXP Semiconductors Electronic Components Datasheet

BFR520T Datasheet

NPN 9 GHz wideband transistor

No Preview Available !

Philips Semiconductors
NPN 9 GHz wideband transistor
Preliminary specification
BFR520T
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
SOT416 (SC75) envelope.
PINNING
PIN
1
2
3
DESCRIPTION
Code: N2
base
emitter
collector
DESCRIPTION
NPN transistor in a plastic SOT416 (SC75) envelope.
It is intended for wideband applications such as satellite
TV tuners, cellular phones, cordless phones, pagers etc.,
with signal frequencies up to 2 GHz.
handbook, halfpage
3
1 2 MAM337
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCES
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F noise figure
CONDITIONS
open emitter
RBE = 0
up to Ts = 118 °C; note 1
IC = 20 mA; VCE = 6 V; Tj = 25 °C
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
Ic = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
Ic = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
MIN.
60
TYP.
120
9
15
1.1
MAX. UNIT
20 V
15 V
70 mA
300 mW
250
GHz
dB
1.6 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
RBE = 0
open collector
up to Ts = 118 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
65
MAX.
20
15
2.5
70
300
150
175
UNIT
V
V
V
mA
mW
°C
°C
1999 Oct 18
2


Part Number BFR520T
Description NPN 9 GHz wideband transistor
Maker NXP
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BFR520T Datasheet PDF






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