BFR520T Datasheet | NXP Semiconductors

FEATURES - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability - SOT416 (SC75) envelope. DESCRIPTION NPN transistor in a plastic SOT416 (SC75) envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2 MAM337 Fig.1 SOT416. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE f T GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C; note 1 IC = 20 m A; VCE = 6 V; Tj = 25 °C IC = 20 m A; VCE = 6 V; f = 1 GHz; Tamb = 25 °C Ic = 20 m A; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Ic = 5 m A; VCE = 6 V; f = 900 MHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 120 9 15 1.1 MAX. 20 15 70 300 250 - - 1.6 GHz d B d B UNIT V V m A m W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 118 °C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - - 65 - MIN. MAX. 20 15 2.5 70 300 150 175 UNIT V V V m A m W °C °C 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C, unless otherwise specified. SYMBOL ICBO h FE Ce Cc Cre f T GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition...