BFR520 Description
·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR520 TC=25℃ unless otherwise specified SYMBOL...