Datasheet Details
| Part number | BFR520 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.85 KB |
| Description | NPN Transistor |
| Datasheet | BFR520-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor.
| Part number | BFR520 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.85 KB |
| Description | NPN Transistor |
| Datasheet | BFR520-INCHANGE.pdf |
|
|
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·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 70 mA 0.3 W 175 ℃ Tstg Storage Temperature Range -65~150 ℃ BFR520 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR520 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT ICBO Collector Cutoff Current VCB= 6V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BFR520 | NPN 9 GHz wideband transistor | NXP |
|
BFR520T | NPN 9 GHz wideband transistor | NXP |
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