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BFU580G - NPN wideband silicon RF transistor

Description

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Low noise, high linearity, high breakdown RF transistor.
  • AEC-Q101 qualified.
  • Minimum noise figure (NFmin) = 0.75 dB at 900 MHz.
  • Maximum stable gain 15.5 dB at 900 MHz.
  • 11 GHz fT silicon technology 1.3.

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Datasheet Details

Part number BFU580G
Manufacturer NXP
File Size 228.56 KB
Description NPN wideband silicon RF transistor
Datasheet download datasheet BFU580G Datasheet
Additional preview pages of the BFU580G datasheet.

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Full PDF Text Transcription

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627 BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Low noise, high linearity, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.75 dB at 900 MHz  Maximum stable gain 15.5 dB at 900 MHz  11 GHz fT silicon technology 1.
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