NXP Semiconductors BFU580Q
The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Available design support Download from the BFU580Q product information page on Support item Available Remarks Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.| Part No. | BFU580Q |
|---|---|
| Datasheet | BFU580Q Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband silicon RF transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low noise, high linearity, high breakdown RF transistor● AEC-Q101 qualified
● Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
● Maximum stable gain 14 dB at 900 MHz
● 11 GHz fT silicon technology 1.3
APPLICATIONS
●APPLICATIONS
requiring high supply voltages and high breakdown voltages● Broadband amplifiers up to 2 GHz
● Low noise, high linearity amplifiers for ISM applications
● Automotive applications (e.g., antenna amplifiers) 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp 120 C hFE DC current gain IC = 30 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 30 60 mA [1] - - 1000 mW 60 95 130 - 1.1 - pF - 10.5 - GHz NXP Semiconductors BFU580Q NPN wideband silicon RF transistor Table 1.
