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BFU580Q - NPN Transistor

General Description

fT = 8.5GHz TYP.

︱S21︱2 =13dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and line

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure fT = 8.5GHz TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·High Gain ︱S21︱2 =13dB TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BFU580Q VALUE 25 15 2.5 60 1 -40~150 -65~150 UNIT V V V mA W ℃ ℃ isc website：www.iscsemi.