BFU580G Datasheet | NXP Semiconductors

627 NPN wideband silicon RF transistor Rev. 1 - 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits - Low noise, high linearity, high breakdown RF transistor - AEC-Q101 qualified - Minimum noise figure (NFmin) = 0.75 d B at 900 MHz - Maximum stable gain 15.5 d B at 900 MHz - 11 GHz f T silicon technology 1.3 Applications - Applications requiring high supply voltages and high breakdown voltages - Broadband amplifiers up to 2 GHz - Low noise, high linearity amplifiers for ISM applications - Automotive applications (e.g., antenna amplifiers) 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  120 C h FE DC current gain IC = 30 m A; VCE = 8...