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627
BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.75 dB at 900 MHz Maximum stable gain 15.5 dB at 900 MHz 11 GHz fT silicon technology
1.