BFU580G Description
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
BFU580G Key Features
- Low noise, high linearity, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
- Maximum stable gain 15.5 dB at 900 MHz
- 11 GHz fT silicon technology