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BFU590G - NPN wideband silicon RF transistor

Description

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Medium power, high linearity, high breakdown voltage RF transistor.
  • AEC-Q101 qualified.
  • Maximum stable gain 13 dB at 900 MHz.
  • PL(1dB) 21.5 dBm at 900 MHz.
  • 8.5 GHz fT silicon technology 1.3.

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Datasheet Details

Part number BFU590G
Manufacturer NXP
File Size 218.07 KB
Description NPN wideband silicon RF transistor
Datasheet download datasheet BFU590G Datasheet
Additional preview pages of the BFU590G datasheet.

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Full PDF Text Transcription

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627 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Medium power, high linearity, high breakdown voltage RF transistor  AEC-Q101 qualified  Maximum stable gain 13 dB at 900 MHz  PL(1dB) 21.5 dBm at 900 MHz  8.5 GHz fT silicon technology 1.3 Applications  Automotive applications  Broadband amplifiers  Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)  Large signal amplifiers for ISM applications 1.
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