Datasheet4U Logo Datasheet4U.com

BFU590Q - NPN wideband silicon RF transistor

Description

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.

The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Medium power, high linearity, high breakdown voltage RF transistor.
  • AEC-Q101 qualified.
  • Maximum stable gain 11 dB at 900 MHz.
  • PL(1dB) 22 dBm at 900 MHz.
  • 8 GHz fT silicon technology 1.3.

📥 Download Datasheet

Datasheet preview – BFU590Q

Datasheet Details

Part number BFU590Q
Manufacturer NXP Semiconductors
File Size 194.95 KB
Description NPN wideband silicon RF transistor
Datasheet download datasheet BFU590Q Datasheet
Additional preview pages of the BFU590Q datasheet.

📁 Similar Datasheet

  • BFU580Q - NPN Transistor (INCHANGE)
  • BFU450C - FILTERS (Murata Electronics)
  • BFU450C4N - FILTERS (Murata Electronics)
  • BFU450K3 - FILTERS (Murata Electronics)
  • BFU630F - NPN wideband silicon RF transistor (NXP Semiconductors)
  • BFU660F - NPN wideband silicon RF transistor (NXP Semiconductors)
  • BFU690F - NPN wideband silicon RF transistor (NXP Semiconductors)
  • BFU710F - NPN wideband silicon germanium RF transistor (NXP Semiconductors)
  • BFU725F - NPN wideband silicon germanium RF transistor (NXP Semiconductors)
  • BFU730F - wideband silicon germanium RF transistor (NXP Semiconductors)
Other Datasheets by NXP
  • BFU590G - NPN wideband silicon RF transistor
  • BFU510 - NPN SiGe wideband transistor
  • BFU520 - NPN wideband silicon RF transistor
  • BFU520A - NPN wideband silicon RF transistor
  • BFU520W - NPN wideband silicon RF transistor
  • BFU520X - NPN wideband silicon RF transistor
  • BFU520XR - NPN wideband silicon RF transistor
  • BFU520Y - Dual NPN wideband silicon RF transistor

Full PDF Text Transcription

Click to expand full text
627 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Medium power, high linearity, high breakdown voltage RF transistor  AEC-Q101 qualified  Maximum stable gain 11 dB at 900 MHz  PL(1dB) 22 dBm at 900 MHz  8 GHz fT silicon technology 1.3 Applications  Automotive applications  Broadband amplifiers  Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)  Large signal amplifiers for ISM applications 1.
Published: |