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BFU610F - NPN Wideband Silicon Germanium RF Transistor

Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

  • Low noise high gain microwave transistor.
  • Noise figure (NF) = 1.7 dB at 5.8 GHz.
  • High associated gain 13.5 dB at 5.8 GHz.
  • 40 GHz fT silicon technology 1.3.

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Datasheet Details

Part number BFU610F
Manufacturer NXP Semiconductors
File Size 126.30 KB
Description NPN Wideband Silicon Germanium RF Transistor
Datasheet download datasheet BFU610F Datasheet
Additional preview pages of the BFU610F datasheet.

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Full PDF Text Transcription

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BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits „ Low noise high gain microwave transistor „ Noise figure (NF) = 1.7 dB at 5.8 GHz „ High associated gain 13.5 dB at 5.8 GHz „ 40 GHz fT silicon technology 1.
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