BFU610F Datasheet - NXP

NPN Wideband Silicon Germanium RF Transistor

BFU610F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 1.7 dB at 5.8 GHz

* High associated gain 13.5 dB at 5.8 GHz

* 40 GHz fT silicon technology 1.3 Applications

* Low current battery equipped applications

* Low noise amplifiers for microwav

BFU610F General Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20.

BFU610F Datasheet (126.30 KB)