BFU610F Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.7 dB at 5.8 GHz
- High associated gain 13.5 dB at 5.8 GHz
- 40 GHz fT silicon technology
- Part: BFU610F
- Description: NPN Wideband Silicon Germanium RF Transistor
- Manufacturer: NXP Semiconductors
- Size: 126.30 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BFU510 | NPN SiGe wideband transistor |
| BFU520 | NPN wideband silicon RF transistor |
| BFU520A | NPN wideband silicon RF transistor |
| BFU520W | NPN wideband silicon RF transistor |
| BFU520X | NPN wideband silicon RF transistor |