BGF844 Datasheet - NXP

GSM800 EDGE power module

BGF844 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:

* Output power = 2.5 W

* Gain = 30 dB

* Efficiency = 16%

* ACPR <

* 65 dBc at 400 kHz

* rms EVM < 0.4%

* peak EVM < 1.2%

* Low distortion to a GSM EDGE signal

BGF844 General Description

23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 869 to 894 869 to 894 VS (V) 26 26 PL (W) 23 2..

BGF844 Datasheet (91.19 KB)

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Part number:

BGF844

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NXP ↗

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91.19 KB

Description:

Gsm800 edge power module.
DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product speciﬁcation Supersedes data of 2003 Feb 26 2003 Jun 06 Philips .

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BGF844 GSM800 EDGE power module NXP

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