BGF944 Datasheet - NXP

GSM900 EDGE power module

BGF944 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:

* Output power = 2.5 W

* Gain = 29 dB

* Efficiency = 15%

* ACPR <

* 65 dBc at 400 kHz

* rms EVM < 0.4%

* peak EVM < 1.2%

* Low distortion to a GSM EDGE signal

BGF944 General Description

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 920 to 960 920 to 960 VS (V) 26 26 PL (W) 17 2..

BGF944 Datasheet (91.74 KB)

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Part number:

BGF944

Manufacturer:

NXP ↗

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91.74 KB

Description:

Gsm900 edge power module.
DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product speciﬁcation Supersedes data of 2003 Feb 26 2003 Jun 06 Philips .

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BGF944 GSM900 EDGE power module NXP

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