BLA6H1011-600 Datasheet LDMOS avionics power transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLA6H1011-600
Manufacturer	NXP Semiconductors
File Size	163.57 KB
Description	LDMOS avionics power transistor
Download	BLA6H1011-600 Download (PDF)

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C;

Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1030 MHz to 1090 MHz).

Brand Logo	Part Number	Description	Manufacturer
	BLA6H1011-600	LDMOS avionics power transistor	Ampleon