BLA6H1011-600 Description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Test information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
BLA6H1011-600 Key Features
- Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp o
- Output power = 600 W
- Power gain = 17 dB
- Efficiency = 52 %
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse