BLA6H1011-600 Datasheet | Ampleon

LDMOS avionics power transistor Rev. 02 - 1 September 2015 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation f (MHz) VDS PL Gp D tr tf (V) (W) (d B) (%) (ns) (ns) pulsed RF 1030 to 1090 48 600 17 52 11 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits - Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 m A, a tp of 50 s with  of 2 %: - Output power = 600 W - Power gain = 17 d B - Efficiency = 52 % - Easy power control - Integrated ESD protection - High flexibility with respect to...