BLA6H1011-600 Description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Test information Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
BLA6H1011-600 Key Features
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1030 MHz to 1090 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)