BLA6H1011-600 Datasheet | NXP Semiconductors

.. LDMOS avionics power transistor Rev. 01 - 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 VDS (V) 48 PL (W) 600 Gp (d B) 17 ηD (%) 52 tr (ns) 11 tf (ns) 5 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits - Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 m A, a tp of 50 μs with δ of 2 %: ‹ Output power = 600 W ‹ Power gain = 17 d B ‹ Efficiency = 52 % - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (1030 MHz to 1090 MHz) - Internally matched for ease of use - pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) .. NXP Semiconductors LDMOS avionics power transistor 1.3 Applications - 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2...