BLA6H1011-600 - LDMOS avionics power transistor

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit.

• Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: ‹ Output power = 600 W ‹ Power gain = 17 dB ‹ Efficiency = 52 %.
• Easy power control.
• Integrated ESD protection.
• High flexibility with respect to pulse formats.
• Excellent ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for broadband operation (1030 MHz to 1090 MHz).