BLA6H1011-600 - LDMOS avionics power transistor

Product Overview

NXP

Part number	BLA6H1011-600
Manufacturer	NXP
File Size	163.57 KB
Description	LDMOS avionics power transistor
Datasheet	BLA6H1011-600 Datasheet
Additional preview pages of the BLA6H1011-600 datasheet.

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit.

Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1030 MHz to 1090 MHz).

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Published: Jun 30, 2010 |