BLF10M6160 - Power LDMOS transistor

NXP Semiconductors

Datasheet Details

160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev.

1 — 24 June 2014 Product data sheet 1.

Product profile 1.

Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (700 MHz to 1000 MHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLF10M6160	Power LDMOS transistor	Ampleon