logo

BLF10M6LS160 Datasheet, NXP

BLF10M6LS160 transistor equivalent, power ldmos transistor.

BLF10M6LS160 Avg. rating / M : 1.0 rating-13

datasheet Download

BLF10M6LS160 Datasheet

Features and benefits


* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband o.

Application

at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a clas.

Description

160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz).

Image gallery

BLF10M6LS160 Page 1 BLF10M6LS160 Page 2 BLF10M6LS160 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts