900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BLF368 Datasheet

VHF push-pull power MOS transistor

No Preview Available !

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF368
VHF push-pull power MOS
transistor
Product specification
Supersedes data of September 1992
1998 Jul 29


NXP Semiconductors Electronic Components Datasheet

BLF368 Datasheet

VHF push-pull power MOS transistor

No Preview Available !

Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF368
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
ndbook, halfpage
12
5
3
Top view
5
4
MSB008
d2
g2
s
g1
d1
MBB157
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PINNING - SOT262A1
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
f
VDS
PL
(MHz) (V) (W)
CW, class-AB
225 32 300
Gp
(dB)
>12
typ. 13.5
Gp
(dB)
(note 1)
>1
typ. 0.4
ηD
(%)
>55
typ. 62
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
1998 Jul 29
2


Part Number BLF368
Description VHF push-pull power MOS transistor
Maker NXP
PDF Download

BLF368 Datasheet PDF






Similar Datasheet

1 BLF368 VHF push-pull power MOS transistor
NXP
2 BLF369 VHF power LDMOS transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy