VHF push-pull power MOS transistor
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
Fig.1 Simplified outline and symbol.
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PINNING - SOT262A1
1 drain 1
2 drain 2
3 gate 1
4 gate 2
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
(MHz) (V) (W)
225 32 300
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
1998 Jul 29