BLF369 - VHF power LDMOS transistor

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NXP

BLF369 VHF power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF369

Datasheet Details

Part number	BLF369
Manufacturer	NXP
File Size	172.52 KB
Description	VHF power LDMOS transistor
Datasheet	BLF369 Datasheet
Additional preview pages of the BLF369 datasheet.

Product details

Description

A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. 28 Th is the heatsink temperature.CAUTION This device is sensitive to ElectroStatic

Features

I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efﬁciency ηD = 60 % I Advanced ﬂange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I Designed for broadband operation (HF/VHF band) I Source on underside eliminates DC isolators, reducing common-mode inductance I Easy power control 1.3.

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Published: Jan 31, 2007 |