NXP Semiconductors BLF346
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BLF346 |
|---|---|
| Datasheet | BLF346 Download |
| Manufacturer |  NXP Semiconductors |
| Description | VHF power MOS transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Easy power control
● Good thermal stability
● Gold metallization ensures excellent reliability.
APPLICATIONS
● Linear amplifier applications in Television transmitters and transposers.DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. CAUTION The device is supplied in an antistatic package. PINNING-SOT119 PIN 1 2 3 4 5 6 SYMBOL s s g d s s BLF346DESCRIPTION
source source gate drain source source handbook, halfpage 1 2 d g s 3 4 5 6 MAM268 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance in a linear amplifier. MODE OF OPERATION Class-A Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level.
