BLF346 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLF346 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 02 Philips Semiconductors Product specification VHF power MOS transistor Features - High power gain - Easy power control - Good thermal stability - Gold metallization ensures excellent reliability. APPLICATIONS - Linear amplifier applications in Television transmitters and transposers. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING-SOT119 PIN 1 2 3 4 5 6 SYMBOL s s g d s s DESCRIPTION source source gate drain source source handbook, halfpage 2 d g s MAM268 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance in a linear amplifier. MODE OF OPERATION Class-A Note 1. Three-tone test method (vision carrier - 8 d B, sound carrier - 7 d B, sideband signal - 16 d B), zero d B corresponds to peak synchronization level. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 02 2 f (MHz) 224.25 VDS (V) 28 ID (A) 3 Th (°C) 70 25 PL (W) >24 typ. 30 GP (d B) >14 typ. 16.5 dim (d B) (1) - 52 - 52 Philips...