BLF346 Description
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.
BLF346 Key Features
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability