BLF368 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of September 1992 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor Features - High power gain - Easy power control - Good thermal stability - Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the mon source connection for the transistors. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source ndbook, halfpage PIN CONFIGURATION 2 d2 g2 g1 s d1 MBB157 5 3 Top view 5 4 MSB008 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull mon source test circuit. MODE OF OPERATION CW, class-AB f (MHz) 225 VDS (V) 32 PL (W) 300 Gp (d B) >12 typ. 13.5 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 d B gain pression corresponds with 30% synchronized input/25% synchronized output pression in television service...