BLF378 Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the mon source connection for the transistors. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
BLF378 Key Features
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability