NXP Semiconductors BLF348
The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.| Part No. | BLF348 |
|---|---|
| Datasheet | BLF348 Download |
| Manufacturer |  NXP Semiconductors |
| Description | VHF linear push-pull power MOS transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Easy power control
● Good thermal stability
● Gold metallization ensures excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. PINNING − SOT262A1 PIN 1 2 3 4 5DESCRIPTION
drain 1 drain 2 gate 1 gate 2 source 5 3 Top view BLF348 PIN CONFIGURATION 1 k, halfpage 2 d2 g2 g1 s d1 MBB157 5 4 MSB008 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environment safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
