BLF348 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor Features - High power gain - Easy power control - Good thermal stability - Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the mon source connection for the transistors. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source 5 3 Top view PIN CONFIGURATION 1 k, halfpage 2 d2 g2 g1 s d1 MBB157 5 4 MSB008 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environment safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance in a push-pull mon source test circuit. MODE OF OPERATION class-A fvision (MHz) 224.25 224.25 Note 1. Three-tone test method (vision carrier - 8 d B, sound carrier - 7 d B, sideband signal - 16 d B), zero d B corresponds to peak synchronization level. VDS (V) 28 28 ID (A) 2 × 4.6 2 × 4.6 Th (°C) 70 25 dim (d B) (note 1) - 52 - 52 Po sync (W) > 67 typ. 75 Gp (d B) > 11 typ....