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BLL8H1214L-250 - LDMOS L-band radar power transistor

NXP

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Datasheet Details

Part number	BLL8H1214L-250
Manufacturer	NXP
File Size	121.94 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL8H1214L-250-NXP.pdf

BLL8H1214L-250 Product details

Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Features

Easy power control.
Integrated dual side ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

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Published: Mar 5, 2016 |