BLP8G20S-80P Datasheet - NXP

Power LDMOS transistor

BLP8G20S-80P Features

* Designed for broadband operation (1800 MHz to 2200 MHz) Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restricti

BLP8G20S-80P General Description

80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal 2-carrier W-CDMA f (MHz) 1805 to 1880 1880 to 1920 2110 to 2170 [1] IDq (mA) 300.

BLP8G20S-80P Datasheet (126.40 KB)