BLP8G21S-160PV Datasheet (Power LDMOS transistor)

Part: BLP8G21S-160PV
Manufacturer: NXP Semiconductors (official site)
Size: 126.46 KB

BLP8G21S-160PV Key Features

Designed for broadband operation (1880 MHz to 2025 MHz)
Decoupling leads to enable improved video bandwidth
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Other BLP8G21S-160PV Datasheets

Manufacturer	Part Number	Description
Ampleon	BLP8G21S-160PV	Power LDMOS transistor

View all BLP8G21S-160PV datasheets →

BLP8G21S-160PV Description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Typical performance Typical RF performance per section at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.

BLP8G21S-160PV Applications

Designed for broadband operation (1880 MHz to 2025 MHz)
Decoupling leads to enable improved video bandwidth