BLP8G21S-160PV Datasheet - NXP

Power LDMOS transistor

BLP8G21S-160PV Features

* Designed for broadband operation (1880 MHz to 2025 MHz)

* Decoupling leads to enable improved video bandwidth

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* High power gain

* Integrated ESD protection

BLP8G21S-160PV General Description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB.

BLP8G21S-160PV Datasheet (126.46 KB)