BLP8G21S-160PV Overview
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Typical performance Typical RF performance per section at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.
BLP8G21S-160PV Key Features
- Designed for broadband operation (1880 MHz to 2025 MHz)
- Decoupling leads to enable improved video bandwidth
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Internally matched for ease of use
- High power gain
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Haz
BLP8G21S-160PV Applications
- Designed for broadband operation (1880 MHz to 2025 MHz)
- Decoupling leads to enable improved video bandwidth
