BLP8G27-10 Datasheet - NXP

Power LDMOS transistor

BLP8G27-10 Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Excellent thermal stability

* High power gain

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications

* CDMA

BLP8G27-10 General Description

10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp D ACPR.

BLP8G27-10 Datasheet (126.68 KB)