BLP8G27-10 Key Features
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Excellent thermal stability
- High power gain
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
- Part: BLP8G27-10
- Manufacturer: NXP Semiconductors (official site)
- Size: 126.68 KB
Other BLP8G27-10 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Ampleon |
BLP8G27-10 | Power LDMOS transistor |
BLP8G27-10 Description
10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; in a class-AB application circuit.