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BLS6G2731-120 Datasheet

LDMOS S-band Radar Power Transistor

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BLS6G2731-120;
BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 120
13.5 48
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %:
N Output power = 120 W
N Power gain = 13.5 dB
N Efficiency = 48 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.7 GHz to 3.1 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)


NXP Semiconductors Electronic Components Datasheet

BLS6G2731-120 Datasheet

LDMOS S-band Radar Power Transistor

No Preview Available !

www.DNatXaSPheSete4Um.coicmonductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
1.3 Applications
I S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
2. Pinning information
Table 2. Pinning
Pin Description
BLS6G2731-120 (SOT502A)
1 drain
2 gate
3 source
BLS6G2731S-120 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
11
3
[1]
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
Version
BLS6G2731-120 -
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLS6G2731S-120 -
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
-
0.5
-
65
-
Max
60
+13
33
+150
225
Unit
V
V
A
°C
°C
BLS6G2731-120_6G2731S-120_1
Product data sheet
Rev. 01 — 14 November 2008
© NXP B.V. 2008. All rights reserved.
2 of 12


Part Number BLS6G2731-120
Description LDMOS S-band Radar Power Transistor
Maker NXP
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