BLS6G2731-120 Datasheet LDMOS S-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product proﬁle 1.

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Datasheet Details

Part number	BLS6G2731-120
Manufacturer	NXP Semiconductors
File Size	112.86 KB
Description	LDMOS S-band Radar Power Transistor
Download	BLS6G2731-120 Download (PDF)

General Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

Key Features

I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efﬁciency = 48 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.

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