BLS6G2731-120 Overview
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
BLS6G2731-120 Details
| Part number | BLS6G2731-120 |
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| Datasheet | BLS6G2731-120 Datasheet PDF (Download) |
| File Size | 112.86 KB |
| Manufacturer | NXP Semiconductors |
| Description | LDMOS S-band Radar Power Transistor |
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