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BLS6G2735LS-30 Datasheet, NXP

BLS6G2735LS-30 transistor equivalent, s-band ldmos transistor.

BLS6G2735LS-30 Avg. rating / M : 1.0 rating-13

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BLS6G2735LS-30 Datasheet

Features and benefits


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* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7.

Application

in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C.

Description

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF puls.

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