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BLS6G2735LS-30, BLS6G2735L-30 Datasheet - NXP

BLS6G2735LS-30 S-band LDMOS transistor

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 V.

BLS6G2735LS-30 Features

* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substanc

BLS6G2735L-30-NXP.pdf

This datasheet PDF includes multiple part numbers: BLS6G2735LS-30, BLS6G2735L-30. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLS6G2735LS-30, BLS6G2735L-30

Manufacturer:

NXP ↗

File Size:

681.75 KB

Description:

S-band ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLS6G2735LS-30, BLS6G2735L-30.
Please refer to the document for exact specifications by model.

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TAGS

BLS6G2735LS-30 BLS6G2735L-30 S-band LDMOS transistor NXP

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