BLS7G2730LS-200P, BLS7G2730L-200P Datasheet - NXP

BLS7G2730LS-200P LDMOS S-band radar power transistor

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit .

BLS7G2730LS-200P Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Excellent thermal stability

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Internally matched for ease of use

* Compliant to Directiv

BLS7G2730L-200P-NXP.pdf

BLS7G2730LS-200P Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS7G2730LS-200P, BLS7G2730L-200P. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLS7G2730LS-200P, BLS7G2730L-200P

Manufacturer:

NXP ↗

File Size:

177.01 KB

Description:

Ldmos s-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLS7G2730LS-200P, BLS7G2730L-200P.
Please refer to the document for exact specifications by model.

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TAGS

BLS7G2730LS-200P BLS7G2730L-200P LDMOS S-band radar power transistor NXP

BLS7G2730LS-200P Distributor