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BLS7G2730LS-200P Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Download the BLS7G2730LS-200P datasheet PDF. This datasheet also includes the BLS7G2730L-200P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BLS7G2730L-200P-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C.

Overview

BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev.

3 — 12 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📁 Similar Datasheet

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