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BLS7G2730LS-200P - LDMOS S-band radar power transistor

Download the BLS7G2730LS-200P datasheet PDF. This datasheet also covers the BLS7G2730L-200P variant, as both devices belong to the same ldmos s-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

Table 1.

Typical RF performance at Tcase = 25 C.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLS7G2730L-200P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLS7G2730LS-200P
Manufacturer Ampleon
File Size 419.22 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS7G2730LS-200P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit pulsed RF [2] 2.7 to 3.0 32 pulsed RF [3] 2.9 to 3.1 32 [1] tp = 300 s;  = 10 %; IDq = 100 mA [2] tp = 3000 s;  = 20 %; IDq = 50 mA [3] tp = 500 s;  = 20 %; IDq = 50 mA PL Gp (W) (dB) 200 12 220 12.5 220 12.5 D tr (%) (ns) 48 8 50 20 50 20 tf (ns) 5 6 6 1.