BLS7G2730LS-200P datasheet by Ampleon.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLS7G2730LS-200P |
|---|---|
| Datasheet | BLS7G2730LS-200P BLS7G2730L-200P Datasheet (PDF) |
| File Size | 419.22 KB |
| Manufacturer | Ampleon |
| Description | LDMOS S-band radar power transistor |
|
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200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Typical performance Typical RF performance at Tcase = 25 C. IDq = 100 mA [2] tp = 3000 s;.
View BLS7G2730LS-200P datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLS7G2730LS-200P | LDMOS S-band radar power transistor | NXP |
| Part Number | Description |
|---|---|
| BLS7G2730L-200P | LDMOS S-band radar power transistor |
| BLS7G2729L-350P | LDMOS S-band radar power transistor |
| BLS7G2729LS-350P | LDMOS S-band radar power transistor |
| BLS7G2325L-105 | Power LDMOS transistor |
| BLS7G2933S-150 | LDMOS S-band radar power transistor |
| BLS7G3135L-350P | LDMOS S-band radar power transistor |
| BLS7G3135LS-200 | LDMOS S-band radar power transistor |
| BLS7G3135LS-350P | LDMOS S-band radar power transistor |
| BLS6G2731-120 | LDMOS S-band radar power transistor |
| BLS6G2731-6G | LDMOS S-Band radar power transistor |
