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BLS7G2730LS-200P

Manufacturer: NXP Semiconductors

BLS7G2730LS-200P datasheet by NXP Semiconductors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLS7G2730LS-200P datasheet preview

BLS7G2730LS-200P Datasheet Details

Part number BLS7G2730LS-200P
Datasheet BLS7G2730LS-200P BLS7G2730L-200P Datasheet (PDF)
File Size 177.01 KB
Manufacturer NXP Semiconductors
Description LDMOS S-band radar power transistor
BLS7G2730LS-200P page 2 BLS7G2730LS-200P page 3

BLS7G2730LS-200P Overview

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Typical performance Typical RF performance at Tcase = 25 C. IDq = 100 mA [2] tp = 3000 s;.

BLS7G2730LS-200P Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLS7G2730LS-200P from other manufacturers

View BLS7G2730LS-200P datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLS7G2730LS-200P LDMOS S-band radar power transistor Ampleon
NXP Semiconductors logo - Manufacturer

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BLS7G2730LS-200P Distributor

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