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BLS7G2730LS-200P - LDMOS S-band radar power transistor

Download the BLS7G2730LS-200P datasheet PDF. This datasheet also covers the BLS7G2730L-200P variant, as both devices belong to the same ldmos s-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLS7G2730L-200P-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLS7G2730LS-200P LDMOS S-band radar power transistor Ampleon
BLS7G2730L-200P LDMOS S-band radar power transistor Ampleon
BLS7G2729L-350P LDMOS S-band radar power transistor Ampleon
BLS7G2729LS-350P LDMOS S-band radar power transistor Ampleon
BLS7G2325L-105 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLS7G2730L-200P LDMOS S-band radar power transistor
BLS7G2729L-350P LDMOS S-band radar power transistor
BLS7G2729LS-350P LDMOS S-band radar power transistor
BLS7G2325L-105 Power LDMOS transistor
BLS7G2933S-150 LDMOS S-band radar power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit pulsed RF [2] 2.7 to 3.0 32 pulsed RF [3] 2.9 to 3.1 32 [1] tp = 300 s;  = 10 %; IDq = 100 mA [2] tp = 3000 s;  = 20 %; IDq = 50 mA [3] tp = 500 s;  = 20 %; IDq = 50 mA PL Gp (W) (dB) 200 12 220 12.5 220 12.5 D tr (%) (ns) 48 8 50 20 50 20 tf (ns) 5 6 6 1.