BLS7G2933S-150 Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Datasheet Details

Part number	BLS7G2933S-150
Manufacturer	NXP Semiconductors
File Size	107.45 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS7G2933S-150 Datasheet

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

BLS7G2933S-150 LDMOS S-band radar power transistor Rev.

2 — 23 February 2011 Product data sheet 1.

Product profile 1.

Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 150 W Power gain = 13.5 dB Efficiency = 47 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2.9 GHz to 3.3 GHz).

Brand Logo	Part Number	Description	Manufacturer
	BLS7G2933S-150	LDMOS S-band radar power transistor	Ampleon

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