BLS7G2933S-150 Datasheet - NXP

LDMOS S-band radar power transistor

BLS7G2933S-150 Features

* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 150 W Power gain = 13.5 dB Efficiency = 47 %

* Easy power control

* Integrated ESD protection

* High f

BLS7G2933S-150 General Description

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp ηD (dB) (%).

BLS7G2933S-150 Datasheet (107.45 KB)