• Part: BLS7G2933S-150
  • Description: LDMOS S-band radar power transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 297.68 KB
Download BLS7G2933S-150 Datasheet PDF
Ampleon
BLS7G2933S-150
BLS7G2933S-150 is LDMOS S-band radar power transistor manufactured by Ampleon.
description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (d B) (%) tr (ns) tf (ns) pulsed RF 2.9 to 3.3 32 13.5 47 1.2 Features and benefits - Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 m A, a tp of 300 s with  of 10 %: - Output power = 150 W - Power gain = 13.5 d B - Efficiency = 47 % - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (2.9 GHz to...