BLS7G2933S-150 Description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
BLS7G2933S-150 Key Features
- Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of
- Output power = 150 W
- Power gain = 13.5 dB
- Efficiency = 47 %
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability