Datasheet Details
| Part number | BLS7G2933S-150 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 297.68 KB |
| Description | LDMOS S-band radar power transistor |
| Datasheet |
 BLS7G2933S-150 Datasheet
|
|
|
General Description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Key Features
- Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with of 10 %:.
- Output power = 150 W.
- Power gain = 13.5 dB.
- Efficiency = 47 %.
- Easy power control.
- Integrated ESD protection.
- High flexibility with respect to pulse formats.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (2.9 GHz to 3.