BLS7G2933S-150 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLS7G2933S-150
Manufacturer	Ampleon
File Size	297.68 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS7G2933S-150-Ampleon.pdf

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:.
Output power = 150 W.
Power gain = 13.5 dB.
Efficiency = 47 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2.9 GHz to 3.

Brand Logo	Part Number	Description	Other Manufacturers
	BLS7G2933S-150	LDMOS S-band radar power transistor	NXP

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