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BLS7G2933S-150 - LDMOS S-band radar power transistor

General Description

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Key Features

  • Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 150 W ‹ Power gain = 13.5 dB ‹ Efficiency = 47 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2.9 GHz to 3.3 GHz).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp ηD (dB) (%) tr (ns) tf (ns) pulsed RF 2.9 to 3.3 32 150 13.5 47 20 6 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 150 W ‹ Power gain = 13.