BLS7G2933S-150
BLS7G2933S-150 is LDMOS S-band radar power transistor manufactured by NXP Semiconductors.
description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 m A; in a class-AB production test circuit.
Mode of operation f (GHz)
VDS PL (V) (W)
Gp ηD (d B) (%) tr (ns) tf (ns) pulsed RF
2.9 to 3.3 32 150
13.5 47
1.2 Features and benefits
- Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 m A, a tp of 300 μs with δ of 10 %: Output power = 150 W Power gain = 13.5 d B Efficiency = 47 %
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2.9 GHz to 3.3 GHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range
NXP Semiconductors
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
3 [1]
2 3 sym112
Table 3. Ordering information
Type...
