logo

BLS7G3135LS-200 Datasheet, NXP

BLS7G3135LS-200 transistor equivalent, ldmos s-band radar power transistor.

BLS7G3135LS-200 Avg. rating / M : 1.0 rating-12

datasheet Download

BLS7G3135LS-200 Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* Easy power control
* Integrated ESD pr.

Application

in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C;.

Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test cir.

Image gallery

BLS7G3135LS-200 Page 1 BLS7G3135LS-200 Page 2 BLS7G3135LS-200 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts