BLS7G3135LS-200 Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Overview: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.

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Datasheet Details

Part number	BLS7G3135LS-200
Manufacturer	NXP Semiconductors
File Size	112.70 KB
Description	LDMOS S-band radar power transistor
Download	BLS7G3135LS-200 Download (PDF)

General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

High efficiency.
Excellent ruggedness.
Designed for broadband operation.
Excellent thermal stability.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Internally matched for ease of use (input and output).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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