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BLS7G3135LS-200 Datasheet - NXP

LDMOS S-band radar power transistor

BLS7G3135LS-200 Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Excellent thermal stability

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Internally matched for ease of use (input and output)

* Co

BLS7G3135LS-200 General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D tr t.

BLS7G3135LS-200 Datasheet (112.70 KB)

Preview of BLS7G3135LS-200 PDF

Datasheet Details

Part number:

BLS7G3135LS-200

Manufacturer:

NXP ↗

File Size:

112.70 KB

Description:

Ldmos s-band radar power transistor.
BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 23 September 2013 Product data sheet 1. Product profile 1.1 General descriptio.

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TAGS

BLS7G3135LS-200 LDMOS S-band radar power transistor NXP

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