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BLS7G3135LS-200 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.

Datasheet Details

Part number BLS7G3135LS-200
Manufacturer Ampleon
File Size 299.78 KB
Description LDMOS S-band radar power transistor
Datasheet BLS7G3135LS-200-Ampleon.pdf

General Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use (input and output).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

BLS7G3135LS-200 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NXP Logo BLS7G3135LS-200 LDMOS S-band radar power transistor NXP

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