• Part: BLS7G3135LS-200
  • Description: LDMOS S-band radar power transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 299.78 KB
Download BLS7G3135LS-200 Datasheet PDF
Ampleon
BLS7G3135LS-200
BLS7G3135LS-200 is LDMOS S-band radar power transistor manufactured by Ampleon.
description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 m A; in a class-AB production test circuit. Test signal f (GHz) Gp D tr tf (V) (W) (d B) (%) (ns) (ns) pulsed RF 32 200 12 48 8 32 200 12 46 8 32 200 12 43 8 1.2 Features and benefits - High efficiency - Excellent ruggedness - Designed for broadband operation - Excellent thermal stability - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Internally matched for ease of use (input and output) - pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3 Applications - S-band...